Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures

被引：8

作者：

Ngo, C. Y. ^{[1
]}

Yoon, S. F. ^{[1
]}

Loke, W. K. ^{[1
]}

Ng, T. K. ^{[1
]}

Chua, S. J. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Fac Engn, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Nanostructures; Molecular beam epitaxy; Arsenates; Nanomaterials; Semiconducting III-V materials; Solar cells; SOLAR; GAAS;

D O I：

10.1016/j.jcrysgro.2008.10.076

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, preliminary photovoltaic results of the 10-layer InAs/InGaAs/GaAs quantum dot (QD) heterostructures were presented. As demonstrated, enhancement in the sub-GaAs bandgap spectral response was observed, especially at the 1.0-1.2 eV energy range. This implies that the incorporation of InAs QDs in existing InGaP/GaAs/Ge multijunction solar cells is beneficial for increasing the spectral utilization between Ge (0.67 eV) and GaAs bandgaps (1.42 eV). The open-circuit voltage (V(OC)) and fill factor (FF) of the device are 0.4V and 0.51, respectively. The obtained values are smaller than that reported by GaAs solar cells (V(OC)=1.04 eV and FF=0.85), and the degradation is believed to be due to the accumulated strain from the 10-layer QDs. We believe that, upon optimization, incorporation of the InAs/InGaAs/GaAs QDs into existing InGaP/GaAs/Ge solar cells will result in solar cells with higher efficiency and render solar energy more cost competitive. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1885 / 1888

页数：4

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