Raman study of the phase transition in VO2 thin films

被引：88
|
作者：
Pan, M [1 ]
Liu, J [1 ]
Zhong, HM [1 ]
Wang, SW [1 ]
Li, ZF [1 ]
Chen, XH [1 ]
Lu, W [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 268卷 / 1-2期
关键词：
phase transition; Raman spectra; vanadium dioxide thin films;
D O I：
10.1016/j.jcrysgro.2004.05.005
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have observed hysteretic loops in the structural phase transition Of VO2 thin films using Raman microscopy. A model is presented concerning the size distribution to illustrate the relative Raman intensity-temperature hysteretic loops in the VO2 films. We also found the different changing behavior of A(g) and B-g phonon modes during the phase transition process. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：178 / 183
页数：6
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