A Comparison of Single-Event Transients in Pristine and Irradiated Al0.3Ga0.7N/GaN HEMTs using Two-Photon Absorption and Heavy Ions

被引：25

作者：

Khachatrian, A. ^{[1
,2
]}

Roche, N. J. -H. ^{[2
,3
]}

Buchner, S. ^{[2
]}

Koehler, A. D. ^{[2
]}

Anderson, T. J. ^{[2
]}

Ferlet-Cavrois, V. ^{[4
]}

Muschitiello, M. ^{[4
]}

McMorrow, D. ^{[2
]}

Weaver, B. ^{[2
]}

Hobart, K. D. ^{[2
]}

机构：

[1] Sotera Def Solut, Hernden, VA 20171 USA

[2] Naval Res Lab, Washington, DC 20375 USA

[3] George Washington Univ, Washington, DC 20375 USA

[4] ESA, Noordwijk, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

GaN; heavy ions; high-electron-mobility transistor (HEMT); laser; single event transients; CHARGE COLLECTION MECHANISMS; ALGAN/GAN;

D O I：

10.1109/TNS.2015.2498286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-event transients (SETs) were investigated in Al0.3Ga0.7N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.

引用

页码：2743 / 2751

页数：9

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