A Comparison of Single-Event Transients in Pristine and Irradiated Al0.3Ga0.7N/GaN HEMTs using Two-Photon Absorption and Heavy Ions

被引：25
作者：
Khachatrian, A. [1 ,2 ]
Roche, N. J. -H. [2 ,3 ]
Buchner, S. [2 ]
Koehler, A. D. [2 ]
Anderson, T. J. [2 ]
Ferlet-Cavrois, V. [4 ]
Muschitiello, M. [4 ]
McMorrow, D. [2 ]
Weaver, B. [2 ]
Hobart, K. D. [2 ]
机构：
[1] Sotera Def Solut, Hernden, VA 20171 USA
[2] Naval Res Lab, Washington, DC 20375 USA
[3] George Washington Univ, Washington, DC 20375 USA
[4] ESA, Noordwijk, Netherlands
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期
关键词：
GaN; heavy ions; high-electron-mobility transistor (HEMT); laser; single event transients; CHARGE COLLECTION MECHANISMS; ALGAN/GAN;
D O I：
10.1109/TNS.2015.2498286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single-event transients (SETs) were investigated in Al0.3Ga0.7N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.
引用
收藏
页码：2743 / 2751
页数：9
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