Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part II: Physics-Based Modeling

被引：60

作者：

Lavizzari, Simone ^{[1
,2
]}

Ielmini, Daniele ^{[1
,2
]}

Sharma, Deepak ^{[1
,2
]}

Lacaita, Andrea L. ^{[1
,2
,3
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy

[3] IFN CNR, Sez Politecn Milano, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 05期

关键词：

Amorphous semiconductors; chalcogenide materials; nonvolatile memory; phase-change memory (PCM); reliability estimation; reliability modeling; INTRINSIC DATA RETENTION; CRYSTALLIZATION; RESISTANCE; DRIFT; ENERGY; FILMS;

D O I：

10.1109/TED.2009.2016398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase-change memory (PCM) cells are affected by structural relaxation (SR), which is the atomic-scale rearrangement of the amorphous phase of the chalcogenide material. Since SR affects the stability of electrical parameters of the PCM cell, such as resistance and threshold voltage, physics-based models for SR are necessary to analyze and predict the device reliability. This paper presents a physical model for SR in amorphous chalcogenide materials, linking the defect annihilation dynamics to the conduction behavior of the cell, hence to the electrical characteristics of the PCM cell. The model is able to predict the PCM cell characteristics as a function of annealing time, temperature, and read conditions.

引用

页码：1078 / 1085

页数：8