Intrinsically switchable thin film bulk acoustic wave resonators

被引：28

作者：

Vorobiev, A. ^{[1
]}

Gevorgian, S. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 22期

关键词：

DC;

D O I：

10.1063/1.4881141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of paraelectric phase ferroelectrics is demonstrated experimentally. The composite BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6GHz to 7.7 GHz) by changing polarity of the 5V dc bias voltage at one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric phase ferroelectrics. (C) 2014 AIP Publishing LLC.

引用

页数：4

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