Statistics of electron emission from InAs/GaAs quantum dots

被引：12

作者：

Engström, O ^{[1
]}

Landsberg, PT

Fu, Y

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[2] Univ Southampton, Fac Math Studies, Southampton SO9 5NH, Hants, England

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2006年 / 26卷 / 5-7期

关键词：

quantum dots; electron emmision; DLTS;

D O I：

10.1016/j.msec.2005.09.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical treatment for thermal and tunneling emission of electrons from InAs/GaAs quantum dots is performed to achieve "effective emission rates" corresponding to experimentally obtained quantities. From these results, Arrhenius graphs are calculated using parameter values for quantum dots with 20/10 nm base/height dimension. Emission from the electron s shell as direct transitions, as two-step transitions from the s to the p shell, as thermal transitions from s top followed by tunneling and as direct tunneling from the s and the p shell to the GaAs conduction band is taken into account. Due to the varying emission possibilities, Arrhenius graphs appear with complicated shapes depending on quantities originating from structural and electronic properties of the quantum dots. (c) 2005 Elsevier B.V All rights reserved.

引用

页码：739 / 744

页数：6

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