Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties

被引：0

作者：

Klekovkin, A. V. ^{[1
,2
]}

Kazakov, I. P. ^{[1
]}

Tsvetkov, V. A. ^{[1
]}

Akmaev, M. A. ^{[1
]}

Zinov'ev, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Nagornyi Pr 7,Str 5, Moscow 117105, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2019年 / 46卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

Si1-xGex; Si heterostructures; molecular-beam epitaxy; quantum wells; low-temperature photoluminescence; PHOTOLUMINESCENCE;

D O I：

10.3103/S1068335619030047

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single quantum wells in the Si1-xGex/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, and their properties were compared with the properties of similar heterostructures grown without modulation of the Ge molecular flow. It is shown that modulation of the Ge flow has almost no effect on the spectral properties of the quantum wells.

引用

页码：89 / 92

页数：4

Growth of Si/Si1-xGex/Si (x &lt; 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties

Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties