Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties

被引：0
|
作者：
Klekovkin, A. V. [1 ,2 ]
Kazakov, I. P. [1 ]
Tsvetkov, V. A. [1 ]
Akmaev, M. A. [1 ]
Zinov'ev, S. A. [1 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Nagornyi Pr 7,Str 5, Moscow 117105, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2019年 / 46卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
Si1-xGex; Si heterostructures; molecular-beam epitaxy; quantum wells; low-temperature photoluminescence; PHOTOLUMINESCENCE;
D O I：
10.3103/S1068335619030047
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Single quantum wells in the Si1-xGex/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, and their properties were compared with the properties of similar heterostructures grown without modulation of the Ge molecular flow. It is shown that modulation of the Ge flow has almost no effect on the spectral properties of the quantum wells.
引用
收藏
页码：89 / 92
页数：4
相关论文
共 41 条
  • [1] Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties
    A. V. Klekovkin
    I. P. Kazakov
    V. A. Tsvetkov
    M. A. Akmaev
    S. A. Zinov’ev
    Bulletin of the Lebedev Physics Institute, 2019, 46 : 89 - 92
  • [2] Growth of Si/Si1_xGex/Si (x &lt; 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
    Kazakov, I. P.
    Klekovkin, A. V.
    Tsvetkov, V. A.
    Akmaev, M. A.
    Uvarov, O. V.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2019, 46 (01) : 5 - 8
  • [3] Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
    I. P. Kazakov
    A. V. Klekovkin
    V. A. Tsvetkov
    M. A. Akmaev
    O. V. Uvarov
    Bulletin of the Lebedev Physics Institute, 2019, 46 : 5 - 8
  • [4] Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells
    Sidiki, TP
    Rühm, A
    Ni, WX
    Hansson, GV
    Torres, CMS
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 503 - 507
  • [5] Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells
    Sidiki, TP
    Rühm, A
    Ni, WX
    Hansson, GV
    Torres, CMS
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 503 - 507
  • [6] Luminescence study on Ge islands as stressors on Si1-xGex/Si quantum well
    Kim, ES
    Usami, N
    Sunamura, H
    Fukatsu, S
    Shiraki, Y
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 519 - 523
  • [7] Type II band alignment and exciton wave functions in Si/Si1-xGex quantum wells
    Penn, C
    Christianen, PCM
    Schäffler, F
    Maan, JC
    Bauer, G
    PHYSICA E, 2000, 7 (3-4): : 550 - 554
  • [8] Ge composition dependence of photoluminescence properties of Si1-xGex/Si disordered superlattices
    Wakahara, A
    Kuramoto, K
    Nomura, Y
    Sasaki, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 479 - 484
  • [9] High Performance Thermistor Based on Si1-xGex/Si Multi Quantum Wells
    Kaynak, C. Baristiran
    Yamamoto, Y.
    Goeritz, A.
    Korndoerfer, F.
    Zaumseil, P.
    Kulse, P.
    Schulz, K.
    Wietstruck, M.
    Shafique, A.
    Gurbuz, Y.
    Kaynak, M.
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (05) : 753 - 756
  • [10] LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY
    FUKATSU, S
    USAMI, N
    SHIRAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3B): : 1502 - 1507
12345