Transport properties of [2,2]-paracyclophane thin films

被引：32

作者：

Hu, WP ^{[1
]}

Gompf, B ^{[1
]}

Pflaum, J ^{[1
]}

Schweitzer, D ^{[1
]}

Dressel, M ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys, D-70550 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 23期

关键词：

D O I：

10.1063/1.1758773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport properties of [2,2]-paracyclophane thin films prepared by molecular beam epitaxy were studied by space-charge-limited current measurements. This organic semiconductor, which has a three-dimensional pi-system comparable to that of C-60, is an interesting material for molecular electronic applications due to its remarkably high mobility and its insensitivity against photo-oxidation. The current-voltage characteristics were recorded using a coplanar electrode geometry which has the advantage, that after deposition no further processing of the organic semiconducting layer is necessary. In polycrystalline films hole mobilities up to 10(-2) cm(2) V-1 s(-1) were observed at room temperature. (C) 2004 American Institute of Physics.

引用

页码：4720 / 4722

页数：3

共 19 条

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