Bismuth Incorporation into Gallium Phosphide

被引：0
作者：
Christian, Theresa M. [1 ,2 ]
Beaton, Daniel A. [1 ]
Mascarenhas, Angelo [1 ]
Alberi, Kirstin [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Univ Colorado, Boulder, CO 80309 USA
来源：
INTERNATIONAL SYMPOSIUM ON CLUSTERS AND NANOMATERIALS | 2017年 / 10174卷
关键词：
dilute bismide; GaP; molecular beam epitaxy; interstitials; GAP-N; GROWTH; GAAS1-XBIX; BAND;
D O I：
10.1117/12.2245432
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 degrees C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.
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页数：7
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