Spin injection and diffusion in silicon based devices from a space charge layer

被引：9

作者：

Ghosh, Joydeep ^{[1
]}

Sverdlov, Viktor ^{[1
]}

Windbacher, Thomas ^{[1
]}

Selberherr, Siegfried ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

基金：

欧洲研究理事会;

关键词：

D O I：

10.1063/1.4856056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained. (C) 2014 AIP Publishing LLC.

引用

页数：3

共 6 条

[1]

Jansen R, 2012, NAT MATER, V11, P400, DOI [10.1038/NMAT3293, 10.1038/nmat3293]

[2]

Nikonov D. E., 2013, COMPUTER, V36, P15

[3] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].