Cofabrication of Planar Gunn Diode and HEMT on InP Substrate

被引：4

作者：

Papageorgiou, Vasileios ^{[1
]}

Khalid, Ata ^{[1
]}

Li, Chong ^{[1
]}

Cumming, David R. S. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

Gunn diode; high-electron mobility transistor (HEMT); integration; mm-wave; FREQUENCY; POWER;

D O I：

10.1109/TED.2014.2331368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the cofabrication of planar Gunn diodes and high-electron mobility transistors (HEMTs) on an indium phosphide substrate for the first time. Electron beam lithography has been used extensively for the complete fabrication procedure and a 70-nm T-gate technology was incorporated for the enhancement of the small-signal characteristics of the HEMT. Diodes with anode-to-cathode separation (L-ac) down to 1- and 120-mu m width were shown to oscillate up to 204 GHz. The transistor presents a cutoff frequency (f(T)) of 220 GHz, with power gain up to 330 GHz (f(max)). The integration of the two devices creates the potential for the realization of high-power, high-frequency MMIC Gunn oscillators, circuits, and systems.

引用

页码：2779 / 2784

页数：6

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