Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga

被引:8
|
作者
Look, David C. [1 ,2 ,3 ]
Leedy, Kevin D. [3 ]
Agresta, Donald L. [3 ]
机构
[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[2] Wyle, Dayton, OH 45431 USA
[3] Air Force Res Lab Sensors Directorate, Wright Patterson AFB, OH 45433 USA
基金
美国国家科学基金会;
关键词
SEMICONDUCTORS; PLASMONICS; OXIDE;
D O I
10.1063/1.4884347
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ga-doped ZnO (GZO) films grown by pulsed-laser deposition on quartz and other lattice-mismatched substrates can routinely attain resistivities of 2 x 10(-4) Omega.cm and thus compete with Sn-doped In2O3 (ITO) in large-area transparent-electrode applications. Nondestructive, high-resolution (1-mm) maps of thickness d, concentration n, and mobility mu on such films can be obtained automatically from commercial spectroscopic ellipsometers. From n and mu, degenerate-electron scattering theory yields donor N-D and acceptor N-A concentrations at each point. Finally, N-D and N-A can be identified as [Ga] and [V-Zn], respectively, demonstrating high-density mapping of impurities and point defects in a semiconductor thin film. (C) 2014 AIP Publishing LLC.
引用
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页数:4
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