Investigation on UV Photoresponsivity of main electrical properties of Au/CuO-PVA/n-Si MPS type Schottky Barrier Diodes (SBDs)

被引：20
作者：
Demir, Gulcin Ersoz [1 ]
机构：
[1] Selcuk Univ, Beysehir AA Fac Business, Dept Management Informat Syst, TR-42700 Konya, Turkey
来源：
PHYSICA B-CONDENSED MATTER | 2021年 / 604卷
关键词：
CuO-PVA; Schottky diodes; MPS; Photodiodes; Photocurrent; UV Light intensities; COPPER-OXIDE NANOPARTICLES; PHOTOCONDUCTIVITY PROPERTIES; VOLTAGE CHARACTERISTICS; DIELECTRIC-PROPERTIES; AU/N-SI; ILLUMINATION; TEMPERATURE; BEHAVIOR; PURE; PLOT;
D O I：
10.1016/j.physb.2020.412723
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this study, (CuO doped PVA) composite material was deposited using spin coating technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky Barrier Diodes (MPS type SBDs) were fabricated. The electrical measurements of Au/CuO-PVA/n-Si SBDs were realized in the dark and under various UV (365 nm) light intensities ranging from 50 to 250 mW/cm(2). The basic parameters of the MPS type SBDs such as leakage current (I-0), zero bias barrier height (Phi(B0)), barrier height (Phi(B)), ideality factor (n), series resistance (R-s), shunt resistance (R-sh), rectification rate (RR), photocurrent (I-pc) and surface states (N-ss) were obtained Current-Voltage (I-V) plot based on Thermionic Emission (TE) theory, and Norde function depending on the UV light intensity. As the light intensity increases, RR, R-sh, Phi(B0), and Phi(B) decreased but the n and I-0 increased. In addition, the increase of UV light intensity caused the increase of photocurrent in MPS type SBDs and thus MPS type SBDs exhibited more ohmic behavior.
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页数：7
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