Effect of annealing temperatures on microstructure of (Zr0.8Sn0.2)TiO4 thin films grown by a sol-gel process

被引：5

作者：

Yang, Ru-Yuan ^{[2
]}

Weng, Min-Hang ^{[1
]}

Su, Yan-Kuin ^{[3
]}

Ye, Chang-Sin ^{[3
]}

Wu, Hung-Wei ^{[3
]}

机构：

[1] Natl Nano Device Labs, Tainan 744, Tainan County, Taiwan

[2] Natl Pingtung Univ Sci & Technol, Dept Mat Engn, Pingtung 912, Pingtung County, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 471卷 / 1-2期

关键词：

Microstructure; Interface; (Zr; Sn)TiO4; Sol-gel; Thin film; MICROWAVE DIELECTRIC-PROPERTIES; DEPOSITION;

D O I：

10.1016/j.jallcom.2008.04.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The impact of annealing temperatures on microstructures of zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films grown by a sol-gel process is proposed. ZST thin films were deposited along the (1 0 0) orientation p-type Si substrate and were characterized by XRD, AFM, SIMS and TEM. Amorphous and polycrystal films were grown successfully on Si substrates with different annealing temperatures. The chemical compositions of the films were detected and showed a uniform concentration distribution for all species. Due to the interface layer formed during the annealing process, the dielectric constants of 81-nm-thick ZST films in the present study were similar to 16. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：511 / 514

页数：4

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