High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

被引：307

作者：

Gonschorek, M. ^{[1
]}

Carlin, J-F. ^{[1
]}

Feltin, E. ^{[1
]}

Py, M. A. ^{[1
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.2335390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N/GaN material system. This results in a two-dimensional sheet resistance of 210 Omega/square. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[2] Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02) :888-894

[3] Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors -: art. no. 031107 [J].

Carlin, JF ;

Dorsaz, J ;

Feltin, E ;

Butté, R ;

Grandjean, N ;

Ilegems, M ;

Laügt, M .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[4] Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials [J].

Carlin, JF ;

Zellweger, C ;

Dorsaz, J ;

Nicolay, S ;

Christmann, G ;

Feltin, E ;

Butté, R ;

Grandjean, N .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (11) :2326-2344

[5] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN [J].

Carlin, JF ;

Ilegems, M .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :668-670

[6] High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111) [J].

Dadgar, A ;

Schulze, F ;

Bläsing, J ;

Diez, A ;

Krost, A ;

Neuburger, M ;

Kohn, E ;

Daumiller, I ;

Kunze, M .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5400-5402

[7] InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy [J].

Higashiwaki, M ;

Matsui, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B) :L768-L770

[8] InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics [J].

Katz, O ;

Mistele, D ;

Meyler, B ;

Bahir, G ;

Salzman, J .

ELECTRONICS LETTERS, 2004, 40 (20) :1304-1305

[9] Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors [J].

Katzer, DS ;

Storm, DF ;

Binari, SC ;

Shanabrook, BV ;

Torabi, A ;

Zhou, L ;

Smith, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03) :1204-1208

[10] InAIN/GaN HEMTs:: A first insight into technological optimization [J].

Kuzmík, J ;

Kostopoulos, A ;

Konstantinidis, G ;

Carlin, JF ;

Georgakilas, A ;

Pogany, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) :422-426

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