Strong ultraviolet emission and rectifying behavior of nanocrystalline ZnO films

被引：51

作者：

Zhang, Yang ^{[1
]}

Lin, Bixia ^{[1
]}

Fu, Zhuxi ^{[1
]}

Liu, Cihui ^{[1
]}

Han, Wei ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China

来源：

OPTICAL MATERIALS | 2006年 / 28卷 / 10期

基金：

中国国家自然科学基金;

关键词：

ZnO films; sol-gel; photoluminescence; rectification;

D O I：

10.1016/j.optmat.2005.08.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline ZnO thin films on p-type Si(100) substrates have been prepared by a sol-gel method. X-ray diffraction results showed polycrystalline wurtzite with a preferential (002) orientation. Morphology studies revealed that the films consisted of uniform grains in size of similar to 33 nM. A strong ultraviolet emission with no distinct visible emissions was observed in room temperature photoluminescence spectrum. The ultraviolet emission results from the recombination of free exciton with stronger longitudinal optical (LO) phonon replica. Stronger LO phonon replica may be ascribed to the strong interaction between the exciton and LO phonon in nanostructure. Nanostructure of films is also responsible for the blueshift of free exciton emission compared with single-crystal ZnO. The absence of E, (LO) mode in Raman spectrum further confirmed low defect density in as-grown nanocrystalline ZnO films. The electrical junction properties characterized by current-voltage measurement showed a rectifying behavior. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1192 / 1196

页数：5

共 31 条

[1] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[2] Preparation of c-axis-oriented zinc-oxide thin films and the study of their microstructure and optical properties [J].

Aslan, MH ;

Oral, AY ;

Mensur, E ;

Gül, A ;

Basaran, E .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 82 (04) :543-552

[3] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409

[4] RESONANT RAMAN-SCATTERING IN ZNO [J].

CALLEJA, JM ;

CARDONA, M .

PHYSICAL REVIEW B, 1977, 16 (08) :3753-3761

[5] Influence of processing variables on the structure and properties of ZnO films [J].

Exarhos, GJ ;

Sharma, SK .

THIN SOLID FILMS, 1995, 270 (1-2) :27-32

[6] Blue luminescent center in ZnO films deposited on silicon substrates [J].

Fang, ZB ;

Wang, YY ;

Xu, DY ;

Tan, YS ;

Liu, XQ .

OPTICAL MATERIALS, 2004, 26 (03) :239-242

[7] The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substrates [J].

Fu, ZX ;

Lin, BX ;

Liao, GH ;

Wu, ZQ .

JOURNAL OF CRYSTAL GROWTH, 1998, 193 (03) :316-321

[8] High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD [J].

Haga, K ;

Suzuki, T ;

Kashiwaba, Y ;

Watanabe, H ;

Zhang, BP ;

Segawa, Y .

THIN SOLID FILMS, 2003, 433 (1-2) :131-134

[9] Growth of a high quality ZnO film on sapphire by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers [J].

Kaiya, K ;

Omichi, K ;

Takahashi, N ;

Nakamura, T ;

Okamoto, S ;

Yamamoto, H .

JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (04) :969-972

[10] Analysis of ZnO and ZnMgO nanopillars grown by self-organization [J].

Kling, R ;

Kirchner, C ;

Gruber, T ;

Reuss, F ;

Waag, A .

NANOTECHNOLOGY, 2004, 15 (08) :1043-1046

← 1 2 3 4 →