Background-limited long wavelength infrared InAs/InAs1-xSbx type-II superlattice-based photodetectors operating at 110 K

被引：40
作者：
Haddadi, Abbas [1 ]
Dehzangi, Arash [1 ]
Adhikary, Sourav [1 ]
Chevallier, Romain [1 ]
Razeghi, Manijeh [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
来源：
APL MATERIALS | 2017年 / 5卷 / 03期
关键词：
D O I：
10.1063/1.4975619
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of similar to 10 mu m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R x A of 664 Omega.cm(2) and a dark current density of 8 x 10(-5) A/cm(2), under -80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 x 10(11) cm. root Hz/W and a background-limited operating temperature of 110 K. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution ( CC BY) license
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