Monolithic AWG-based Discretely Tunable Laser Diode With Nanosecond Switching Speed

被引：41

作者：

Heck, Martijn J. R. ^{[1
]}

La Porta, Antonio ^{[2
]}

Leijtens, Xaveer J. M. ^{[1
]}

Augustin, Luc M. ^{[1
]}

de Vries, Tjibbe ^{[1
]}

Smalbrugge, Barry ^{[1
]}

Oei, Yok-Siang ^{[1
]}

Notzel, Richard ^{[1
]}

Gaudino, Roberto ^{[2
]}

Robbins, David J. ^{[1
]}

Smit, Meint K. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 13期

关键词：

Arrayed waveguide grating (AWG); integrated optoelectronics; semiconductor lasers; tunable lasers;

D O I：

10.1109/LPT.2009.2020299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength switching speed is in the order of a few nanoseconds and switching is achieved by a 1-mA bias current. The switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.

引用

页码：905 / 907

页数：3

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