Density-Functional Tight-Binding Simulations of Curvature-Controlled Layer Decoupling and Band-Gap Tuning in Bilayer MoS2

被引:39
作者
Koskinen, Pekka [1 ]
Fampiou, Ioanna [2 ]
Ramasubramaniam, Ashwin [2 ]
机构
[1] Univ Jyvaskyla, Dept Phys, NanoSci Ctr, Jyvaskyla 40014, Finland
[2] Univ Massachusetts, Dept Mech & Ind Engn, Amherst, MA 01003 USA
基金
芬兰科学院; 美国国家科学基金会;
关键词
ELECTRONIC-PROPERTIES; VALLEY POLARIZATION; MONOLAYER; STRAIN;
D O I
10.1103/PhysRevLett.112.186802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Monolayer transition-metal dichalcogenides (TMDCs) display valley-selective circular dichroism due to the presence of time-reversal symmetry and the absence of inversion symmetry, making them promising candidates for valleytronics. In contrast, in bilayer TMDCs both symmetries are present and these desirable valley-selective properties are lost. Here, by using density-functional tight-binding electronic structure simulations and revised periodic boundary conditions, we show that bending of bilayer MoS2 sheets breaks band degeneracies and localizes states on separate layers due to bending-induced strain gradients across the sheets. We propose a strategy for employing bending deformations in bilayer TMDCs as a simple yet effective means of dynamically and reversibly tuning their band gaps while simultaneously tuning valley-selective physics.
引用
收藏
页数:5
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