Giant polarization in organic heterostructures

被引:4
作者
Thurzo, I [1 ]
Kampen, TU [1 ]
Zahn, DRT [1 ]
机构
[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2002年 / 20卷 / 05期
关键词
D O I
10.1116/1.1495508
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Deep levels or polarization effects can influence the charge transport through organic layers. Both effects can be identified by charge deep-level transient spectroscopy (Q-DLTS). Here, deep levels or polarization effects cause the charge transient signal Q(t) to be dependent or independent on the bias voltage, respectively. Q-DLTS, accompanied by feedback charge capacitance (FCM) measurements, has been used in the present work to investigate an organic heterostructure grown on an inorganic semiconductor. GaAs(100) substrates (n=0.34 x 10(18) cm(-3)) were sulfur passivated by wet chemical etching and additional annealing under ultrahigh vacuum (UHV) conditions. Organic molecular beam deposition was used for the growth of 20 nm of 3,4,9,10-perylenetetracarboxilic dianhydride (PTCDA, Lancaster) and 27 nm of tris-(8-hydroxyquinoline) aluminum (Alq3, Syntec). Silver was evaporated on the Alq3 film through a shadow mask resulting in an array of circular contacts with an area of A = 2.1 x 10(-7) m(2). The back contact to the GaAs(100) was achieved by an In-Ga alloy resulting in a series resistance of 20 Ohm. The electrical characterizations were done at room temperature and in situ in the UHV system. The Q-DLTS measurements show a well resolved maximum in Q(t). The amplitude remains almost constant as a function of the bias voltage, which is a clear indication of a polarization in the organic heterostructure. From the experimental results the permittivity dispersion is determined to 2.37. The permittivity dispersion is independently obtained from FCM measurements. With the experimentally determined excess capacitance DeltaC of 90 pF and the thickness of the organic heterostructure the permittivity dispersion is determined to 2.42. The FCM scans show no hysteresis due to the absence of deep levels. The DeltaC/C = 1 presented here clearly indicates the presence of a giant polarization. (C) 2002 American Vacuum Society.
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页码:1597 / 1602
页数:6
相关论文
共 12 条
[1]   Device physics of organic light-emitting diodes based on molecular materials [J].
Bruetting, Wolfgang ;
Berleb, Stefan ;
Mueckl, Anton G. .
ORGANIC ELECTRONICS, 2001, 2 (01) :1-36
[2]   SEMICONDUCTOR ANALYSIS USING ORGANIC-ON-INORGANIC CONTACT BARRIERS .2. APPLICATION TO INP-BASED COMPOUND SEMICONDUCTORS [J].
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2406-2418
[3]   SEMICONDUCTOR ANALYSIS USING ORGANIC-ON-INORGANIC CONTACT BARRIERS .1. THEORY OF THE EFFECTS OF SURFACE-STATES ON DIODE POTENTIAL AND AC ADMITTANCE [J].
FORREST, SR ;
SCHMIDT, PH .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :513-525
[4]   Ultrathin organic films grown by organic molecular beam deposition and related techniques [J].
Forrest, SR .
CHEMICAL REVIEWS, 1997, 97 (06) :1793-1896
[5]  
KAMPEN TU, IN PRESS APPL SURF S
[8]  
Scaife B.K.P., 1998, Principles of Dielectrics
[9]   SWITCHING BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND FEEDBACK CHARGE CAPACITANCE MODES IN A VERSATILE TIME-DOMAIN SPECTROMETER [J].
THURZO, I ;
GMUCOVA, K .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (07) :2244-2248
[10]   The role of traps in polymer-based light-emitting devices [J].
Yakimov, AV ;
Savvate'ev, VN ;
Davidov, D .
SYNTHETIC METALS, 2000, 115 (1-3) :51-56