Preparation and characterization of LaMnO3 thin films grown by pulsed laser deposition

被引：73
作者：
Aruta, C.
Angeloni, M.
Balestrino, G.
Boggio, N. G.
Medaglia, P. G.
Tebano, A.
Davidson, B.
Baldini, M.
Di Castro, D.
Postorino, P.
Dore, P.
Sidorenko, A.
Allodi, G.
De Renzi, R.
机构：
[1] Univ Roma Tor Vergata, Coherentia CNR INFM, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dipartimento Ingn Meccan, I-00133 Rome, Italy
[3] TASC, CNR, INFM, Natl Lab, I-34012 Trieste, Italy
[4] Univ Roma La Sapienza, Coherentia CNR INFM, I-00185 Rome, Italy
[5] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[6] Univ Parma, Dipartimento Fis, I-43100 Parma, Italy
[7] Univ Parma, Unita CNISM, I-43100 Parma, Italy
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 02期
关键词：
D O I：
10.1063/1.2217983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown LaMnO3 thin films on (001) LaAlO3 substrates by pulsed laser deposition. X-ray diffraction confirms that the films are only slightly relaxed and are oriented "square on square" relative to the substrate. The measured Raman spectra closely resemble that observed in bulk LaMnO3, which indicates no relevant distortions of the MnO6 octahedra induced by the epitaxial strain. Therefore, no detectable changes in the lattice dynamics occurred in our LaMnO3 strained films relative to the bulk case. Mn-55 nuclear magnetic resonance identifies the presence of localized Mn4+ states. Superconducting quantum interference device magnetization measures T-N=131(3) K and a saturation moment mu=1.09 mu(B)/Mn, revealing a small concentration of Mn4+ and placing our films within the antiferromagnetic insulating phase. (c) 2006 American Institute of Physics.
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页数：6
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