Time resolution of the SiPM-NUV3S<bold> </bold>

被引:4
作者
Chytka, Ladislav [1 ,2 ]
Hrabovsky, Miroslav [1 ,2 ]
Komarek, Tomas [1 ,2 ]
Michalek, Vaclav [1 ,2 ]
Nozka, Libor [1 ,2 ]
Sykora, Tomas [3 ]
Urbasek, Vladimir [1 ,2 ]
机构
[1] Palacky Univ, Fac Sci, RCPTM, Joint Lab Opt, 17 Listopadu 12, Olomouc 77146, Czech Republic
[2] Acad Sci Czech Republ, Inst Phys, 17 Listopadu 12, Olomouc 77146, Czech Republic
[3] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, V Holesovickach 2, CZ-18000 Prague 8, Czech Republic
关键词
Silicon photomultiplier (SiPM); Multi pixel photon counter (MPPC); Cherenkov time-of-flight; Femtosecond laser pulse<bold>; </bold>;
D O I
10.1016/j.nima.2019.04.082
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon photomultipliers (SiPMs) have become an interesting alternative to conventional and micro-channel plate photomultipliers, proving to be a very good option for Cherenkov light based time-of-flight detectors. The important characteristic for this application is the intrinsic time resolution for a wide range of wavelengths (from below 250 nm up to about 600 nm). We present a study of the time resolution of two SiPMs: a 3 x 3 mm(2) FBK SiPM-NUV3S and a 3.5 x 3.5 mm(2) STMicroelectronics prototype SiPM. The measurement was performed for two representative wavelengths (280 nm and 420 nm) under the variation of SiPM overvoltage and light intensity. The measured transition time spread (TTS) of the devices was (285 +/- 9) ps (FBK) and (154 +/- 20) ps (STM). The time resolution dropped with increasing mean number of photoelectrons (N-pe) as sigma N-TTS(pe)-1/2 with saturation observed for high N-pe. The obtained best time resolutions were (8 +/- 1) ps and (4 +/- 1) ps for the FBK and STM SiPM respectively at N-pe of the order of 10(6) for 420 nm photons. The results for the two wavelengths were comparable, with 280 nm photons providing worse results at very high illumination.
引用
收藏
页码:51 / 55
页数:5
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