Structural and optical characterization of GaSb layers on Si (001) substrates

被引：7

作者：

Toda, T. ^{[1
]}

Jinbo, Y. ^{[1
]}

Uchitomi, N. ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Kamitomioka 1603-1, Nagaoka, Niigata, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期

关键词：

D O I：

10.1002/pssc.200669553

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the growth of GaSb layers on Si (001) substrates by molecular beam epitaxy (MBE). Epilayers were grown as a function of Sb-4/Ga beam equivalent pressure ratio (BEPR). They were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), micro Raman scattering analysis. We confirmed that the optimum condition to grow relative high quality GaSb layer in this study was Sb-4/Ga=20. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2693 / +

页数：2

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