Influences of deposition rate and oxygen partial pressure on residual stress and microstructure of YSZ thin films

被引:17
作者
Xiao, Qiling [1 ,2 ]
He, Hongbo [1 ]
Shao, Shuying [1 ]
Shao, Jianda [1 ]
Fan, Zhengxiu [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
关键词
Residual stress; Electron beam evaporation; YSZ thin films; Deposition rate; Oxygen partial pressure; ELECTROLYTE; EVOLUTION; GROWTH; TEXTURE;
D O I
10.1016/j.tsf.2008.11.138
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Yttria-Stabilized Zirconia (YSZ) thin films were deposited on borosilicate crown glass substrates using electron beam evaporation technique and controlling technological parameters: deposition rate and oxygen partial pressure. Spectrophotometry, optical interferometry and X-ray diffraction were used to investigate how the thin film optical properties, residual stresses, and structure depend on these parameters. The results showed that the deposition rate had a significant influence on the increase of the refractive index of YSZ thin films while the oxygen partial pressure had less influence on it. In all samples, the tensile stress increased with the increasing of deposition rate and the decreasing of oxygen partial pressure. Meanwhile, all deposited films were poly-crystallizations, while crystallite size and preferential orientation of YSZ thin films changed as a function of deposition rate and oxygen partial pressure. The variations of the optical spectra and residual stress corresponded to the evolution of the film structures induced by the deposition parameters. (C) 2008 Published by Elsevier B.V.
引用
收藏
页码:4295 / 4298
页数:4
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