Hot carrier electroluminescence from a single carbon nanotube

被引：142

作者：

Freitag, M

Perebeinos, V

Chen, J

Stein, A

Tsang, JC

Misewich, JA

Martel, R

Avouris, P ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Carbon Nanotechnol Inc, Houston, TX 77084 USA

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

NANO LETTERS | 2004年 / 4卷 / 06期

关键词：

D O I：

10.1021/nl049607u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (similar to50 mum) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (similar to500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10(-6) and 10(-7) photons/electron-hole pair, and the possible quenching mechanisms are discussed.

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页码：1063 / 1066

页数：4

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