共 50 条
- [41] Structural characterization of thick GaN films grown by hydride vapor phase epitaxy III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 245 - 250
- [44] Growth and characterization of semi-insulating GaN films grown by MOCVD JOURNAL OF RARE EARTHS, 2006, 24 : 14 - 18
- [45] High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy GAN AND RELATED ALLOYS-2002, 2003, 743 : 749 - 754
- [49] Excitonic structure of GaN epitaxial films grown by hydride-vapor-phase epitaxy SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 943 - 946
- [50] Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy Journal of Electronic Materials, 2001, 30 : 115 - 122