Charging effect and capacitance modulation of Ni-rich NiO thin film

被引：6

作者：

Ang, R. ^{[1
,2
,3
]}

Chen, T. P. ^{[1
]}

Liu, Z. ^{[1
]}

Wong, J. I. ^{[1
]}

Yi, M. D. ^{[1
]}

Yang, M. ^{[1
]}

Cen, Z. H. ^{[1
]}

Zhu, S. ^{[1
]}

Zhu, W. ^{[1
]}

Goh, E. S. M. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China

[3] Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

MEMORY; NANOCRYSTALS;

D O I：

10.1063/1.3170353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, Ni-rich NiO thin film is deposited on p-type Si substrate by dc magnetron sputtering to form a metal-insulator-semiconductor structure. The charge trapping in the Ni nanocrystals (nc-Ni) embedded in NiO matrix induces a flatband voltage shift and capacitance modulation, which could be used for memory applications. The charging of nc-Ni depends on the voltage polarity, as well as the charging time and magnitude of gate voltage. The capacitance modulation can be described by an equivalent circuit model. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3170353]

引用

页数：3

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