Local structure and bonding of Er in GaN: A contrast with Er in Si

被引：57

作者：

Citrin, PH ^{[1
]}

Northrup, PA

Birkhahn, R

Steckl, AJ

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

[2] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray absorption measurements from relatively high concentrations of Er (> 0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. (C) 2000 American Institute of Physics. [S0003-6951(00)03320-9].

引用

页码：2865 / 2867

页数：3

共 18 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].