Formation of Al-doped ZnO thin films on glass by sol-gel process and characterization

被引：45

作者：

Shahid, M. U. ^{[1
]}

Deen, K. M. ^{[2
]}

Ahmad, A. ^{[1
]}

Akram, M. A. ^{[3
]}

Aslam, M. ^{[4
]}

Akhtar, W. ^{[1
]}

机构：

[1] Univ Engn & Technol, Dept Met & Mat Engn, Lahore 54890, Pakistan

[2] Univ Punjab, CEET, Dept Met & Mat Engn, Lahore 54590, Pakistan

[3] Natl Univ Sci & Technol, Sch Chem & Mat Engn, Islamabad 44000, Pakistan

[4] Univ Tecknol Petronas, Dept Mech Engn, Seri Iskandar 31750, Malaysia

来源：

APPLIED NANOSCIENCE | 2016年 / 6卷 / 02期

关键词：

Thin film; Resistivity; Carrier concentration; Glass; Sol-gel; TRANSPARENT CONDUCTING OXIDES; OPTICAL-PROPERTIES; DEPOSITION;

D O I：

10.1007/s13204-015-0425-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, pure ZnO and Al-doped ZnO thin films were developed on glass by sol-gel process followed by drying and annealing in air at 170 and 400 degrees C, respectively. The surface morphology and structural characteristics were determined through scanning electron microscopy, atomic force microscopy and X-ray diffraction. The Fourier transform infrared spectroscopy validated the formation of Al-doped ZnO film on glass substrate. It was evaluated that 1 at% aluminum (Al) doping in ZnO film showed low electrical resistivity and higher charge carrier concentration due to uniformly dispersed regular shape crystallites as compared to pure ZnO and 2 at% 'Al'-doped thin films.

引用

页码：235 / 241

页数：7

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