The role of hydrogen in the formation of microcrystalline silicon

被引：40
作者：
Morral, AFI [1 ]
Bertomeu, J
Cabarrocas, PRI
机构：
[1] Ecole Polytech, LPICM, UMR 7647 CNRS, F-91128 Palaiseau, France
[2] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷
关键词：
microcrystalline silicon films; hydrogen; low temperatures;
D O I：
10.1016/S0921-5107(99)00324-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250 degrees C) by plasma CVD are still a matter of debate. We have shown that mu c-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：559 / 563
页数：5
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