Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

被引：1171
作者：
Chichibu, S
Azuhata, T
Sota, T
Nakamura, S
机构：
[1] WASEDA UNIV,DEPT ELECT ENGN & COMP ENGN,SHINJUKU KU,TOKYO 169,JAPAN
[2] NICHIA CHEM IND LTD,DEPT RES & DEV,ANAN,TOKUSHIMA 774,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 27期
关键词：
D O I：
10.1063/1.116981
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons. (C) 1996 American Institute of Physics.
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页码：4188 / 4190
页数：3
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