Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon

被引：58

作者：

Couderc, Romain ^{[1
,2
]}

Amara, Mohamed ^{[2
]}

Lemiti, Mustapha ^{[1
]}

机构：

[1] Univ Lyon, CNRS, Inst Nanotechnol INL UMR5270, INSA Lyon, F-69621 Villeurbanne, France

[2] Univ Lyon, CNRS, Ctr Therm Lyon CETHIL UMR5008, INSA Lyon, F-69621 Villeurbanne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 09期

关键词：

UNIAXIALLY STRESSED SILICON; CYCLOTRON-RESONANCE; BAND-GAP; ENERGY-GAP; SEMICONDUCTORS; ELECTRONS; GERMANIUM; HOLES; MASS; SI;

D O I：

10.1063/1.4867776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intrinsic carrier density n(i) of crystalline silicon is an essential parameter for the simulation of electrical and thermal behavior of silicon devices. At 300 K, a value of ni = 9.65 x 10(9) cm(-3) has been determined by extensive experimental studies. However, the temperature dependence of this parameter remains to be verified. In this work, we propose a new expression n(i) 1: 541 x 10(15)T(1.712)exp(-E-g(0)/(2kT) thanks to an updated fit of experimental data. Polynomial fits of (m(dc)(*)/m(0))(3/2) and (m(dv)(*)/m(0))(3/2) are also proposed to model N-C and N-V. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 24 条

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