Improvement of high resistivity substrate for future mixed analog-digital applications

被引：24

作者：

Ohguro, T ^{[1
]}

Kojima, K ^{[1
]}

Momose, HS ^{[1
]}

Nitta, S ^{[1
]}

Fukuda, T ^{[1
]}

Enda, T ^{[1
]}

Toyoshima, Y ^{[1
]}

机构：

[1] Semicond Co, Toshiba Corp, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, high resistivity substrate (HRS) requirements have increased for high Q inductor and suppression of substrate noise from digital to analog circuits [1,2]. However, the HRS wafer has some problems, that is slip generation during STI process due to low residual oxygen, and higher leakage current between adjacent nwells due to extremely lower impurity concentration in the substrate. In this paper, it is shown to resolve these problems and obtain not only suppression substrate noise but also good characteristics of ESD and resistor on HRS.

引用

页码：158 / 159

页数：2