The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials

被引：12

作者：

Chen Jian ^{[1
]}

Huang Zhengren ^{[1
]}

Chen Zhongming ^{[1
]}

Yuan Ming ^{[1
]}

Liu Yan ^{[1
]}

Zhu Yunzhou ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Struct Ceram Engn Res Ctr, Shanghai 200050, Peoples R China

来源：

MATERIALS CHARACTERIZATION | 2014年 / 89卷

基金：

中国国家自然科学基金;

关键词：

Carbon; Silicon carbide; Optical materials; Surface roughness; Reflectance; BORON;

D O I：

10.1016/j.matchar.2013.12.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure and the distribution of carbon (C) in silicon carbide (sic) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The results show that C can restrain the growth of SiC grains and densify SiC ceramics with the increase of the C content, but residual C introduces a new phase-C to SiC ceramics. The hardness of C is less than that of SiC, so it's difficult to be polished as optical materials. The existence of C phase doesn't lead to the increase of surface roughness on SiC optical materials, but it leads to the decrease of the reflectance of SiC as the optical materials because the optical absorption of C in visible light is stronger than that of SiC. It indicates that C content is very important to the surface properties of SiC, which will affect the coating of chemical vapor deposition SiC or Si on the surface of SiC ceramics because of the different physical and chemical properties between C and SiC. (C) 2013 Elsevier Inc. All rights reserved.

引用

页码：7 / 12

页数：6

共 15 条

[1] RELATION BETWEEN SURFACE ROUGHNESS AND SPECULAR REFLECTANCE AT NORMAL INCIDENCE [J].