Continuous model for independent double gate MOSFET

被引：24

作者：

Reyboz, M. ^{[1
]}

Martin, P. ^{[1
]}

Poiroux, T. ^{[1
]}

Rozeau, O. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 05期

关键词：

Symmetrical; Asymmetrical and independent double gate; MOSFET; Compact model; Short channel effects; Mobility model; Charge model; SIGNAL CIRCUIT APPLICATIONS; PHYSICAL COMPACT MODEL; THRESHOLD VOLTAGE; DG MOSFET;

D O I：

10.1016/j.sse.2009.02.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes an explicit compact model of an independent double gate (IDG) MOSFET with an undoped channel. This model includes short channel effects and also mobility reduction, saturation velocity, series resistance and a charge model. It is applicable for symmetrical, asymmetrical and independent gate devices. The validity of this model is demonstrated by comparisons with ATLAS two-dimensional numerical simulations. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：504 / 513

页数：10

共 31 条

[1]

[Anonymous], Atlas User's Manual

[2]

Chan MS, 2004, NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, P108

[3] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].