Low Temperature Aluminum Induced Crystallization of HWCVD Deposited a-Si:H

被引：0

作者：

Pandey, Vivek ^{[1
]}

Dusane, R. O. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay, Maharashtra, India

来源：

2013 INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND EMERGING ENGINEERING TECHNOLOGIES (ICANMEET) | 2013年

关键词：

Nanocrystalline Silicon; HWCVD; Amorphous Silicon; Aluminum Induced Crystallization; LASER-INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON FILMS; MICROCRYSTALLINE SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by Ale. Device quality nc-Si: H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:W/Al.

引用

页码：357 / 359

页数：3