Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

被引：1

作者：

Jung, SK

Song, SH

Hwang, SW ^{[1
]}

Park, JH

Kim, Y

Kim, EK

机构：

[1] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 130650, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 272卷 / 1-4期

关键词：

planar device; self-assembled quantum dot; resonant tunneling;

D O I：

10.1016/S0921-4526(99)00342-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：18 / 20

页数：3

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