Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing

被引:21
作者
Deng, Shaoren [1 ]
Verbruggen, Sammy W. [2 ,3 ]
Lenaerts, Silvia [2 ]
Martens, Johan A. [3 ]
Van den Berghe, Sven [4 ]
Devloo-Casier, Kilian [1 ]
Devulder, Wouter [1 ]
Dendooven, Jolien [1 ]
Deduytsche, Davy [1 ]
Detavernier, Christophe [1 ]
机构
[1] Univ Ghent, Dept Solid State Sci, Krijgslaan 281-S1, B-9000 Ghent, Belgium
[2] Univ Antwerp, Dept Bioengn Sci, B-2020 Antwerp, Belgium
[3] Katholieke Univ Leuven, Ctr Surface Chem & Catalysis, B-3001 Heverlee, Belgium
[4] CEN SCK, B-2400 Mol, Belgium
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2014年 / 32卷 / 01期
基金
欧洲研究理事会;
关键词
ATOMIC LAYER DEPOSITION; THIN-FILMS; PHOTOCATALYTIC APPLICATIONS; ZINC-OXIDE; DIOXIDE; GROWTH;
D O I
10.1116/1.4847976
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity. (C) 2014 American Vacuum Society.
引用
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页数:7
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