The origins of ferromagnetism in Co-doped ZnO single crystalline films: From bound magnetic polaron to free carrier-mediated exchange interaction

被引:87
作者
Lu, Z. L. [1 ,2 ,3 ]
Hsu, H. S. [4 ]
Tzeng, Y. H. [3 ,5 ]
Zhang, F. M. [6 ]
Du, Y. W. [6 ]
Huang, J. C. A. [2 ,3 ]
机构
[1] Southeast Univ, Dept Phys, Nanjing 211189, Peoples R China
[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, IIAS, Tainan 701, Taiwan
[4] Natl Ping Tung Univ Educ, Dept Appl Phys, Pingtung 900, Taiwan
[5] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[6] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
基金
美国国家科学基金会;
关键词
cobalt; electrical conductivity; exchange interactions (electron); ferromagnetic materials; II-VI semiconductors; magnetic epitaxial layers; magnetic polarons; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; SEMICONDUCTORS; OXIDE;
D O I
10.1063/1.3224911
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-quality Co-doped ZnO single crystalline films with a wide range of carrier concentration and good reproducibility have been grown by molecular beam epitaxy. After the systematic studies of the magnetic and transport properties of the films, we suggest that there are two distinct ferromagnetic mechanisms in different conductivity regimes. In the insulating regime, carriers tend to be localized, favoring the formation of bound magnetic polarons, which leads to ferromagnetism. In the metallic regime, however, most carriers are weakly localized and the free carrier-mediated exchange is dominant. Our experimental observations are well consistent with the recent theoretical description of magnetism in Co-doped ZnO and helpful for understanding the ferromagnetic mechanism in oxide-based diluted magnetic semiconductors.
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页数:3
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