Vertical heterostructures based on graphene and other 2D materials

被引：36
作者：
Antonova, I. V. [1 ,2 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2016年 / 50卷 / 01期
关键词：
HEXAGONAL BORON-NITRIDE; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; LAYER GRAPHENE; BALLISTIC TRANSPORT; SCALE SYNTHESIS; MONOLAYER MOS2; GROWTH; PERFORMANCE; MOBILITY;
D O I：
10.1134/S106378261601005X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.
引用
收藏
页码：66 / 82
页数：17
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