Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

被引：0

作者：

Liu, Zhengxin ^{[1
]}

Wang, Dongliang ^{[2
]}

Bian, Lieyu ^{[1
]}

Liu, Jinning ^{[1
]}

Meng, Fanying ^{[1
]}

Zhang, Liping ^{[1
]}

Bao, Jian ^{[2
]}

Guo, Wanwu ^{[2
]}

Feng, Zhiqiang ^{[2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China

[2] Trina Solar, State Key Lab PV Sci & Technol, Changzhou 213031, Peoples R China

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

silicon; heterojunction solar cells; surface passivation; CHEMICAL OXIDES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In a-Si:H/c-Si heterojunction solar cells, we developed two methods to improve the passivation effect at the a-Si: H/c-Si interface. (i) Chemical polish, etched c-Si wafer with HF and HNO3 mixtures to smooth the peaks and valleys of pyramids after the texturization with alkali; (ii) SiOx, interlayer, formed ultrathin SiOx, layers with a thickness of about 2 nm on c-Si surface after the chemical polish and standard RCA cleaning. This thin layer was formed by chemical oxidization in various hot solutions. The results demonstrated that these two methods improved the quality of a-Si: H/c-Si interface and the effective carrier lifetime. When they were applied to heterojunction solar cells, gains in V-oc and J(sc) were successfully achieved. The simplicity of these methods suggested the possible applications to the industry production.

引用

页码：1227 / 1229

页数：3

共 6 条

[1] Wet-chemical preparation and spectroscopic characterization of Si interfaces [J].