Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes

被引：11

作者：

Usman, Muhammad ^{[1
]}

Mushtaq, Urooj ^{[1
]}

Munsif, Munaza ^{[1
]}

Anwar, Abdur-Rehman ^{[2
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Swabi 23460, Khyber Pakhtunk, Pakistan

[2] COMSATS Univ Islamabad, Elect & Comp Engn Dept, Wah Campus, Wah Cantonment 47040, Pakistan

来源：

PHYSICA SCRIPTA | 2019年 / 94卷 / 10期

关键词：

light-emitting diodes; N-polar; Ga-polar; QUANTUM-WELLS;

D O I：

10.1088/1402-4896/ab28c0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the numerical effect of the polarity of the built-in field on the GaN-based light-emitting diodes (LEDs). The results show that, in comparison to the Ga-polar device, the p-down N-polar device shows significant improvement in electronic and optical characteristics. In N-LED, the turn-on voltage, internal quantum efficiency and radiative recombination rate is improved by 6%, three times at 100 A cm(-2 )and 194%, respectively. It is shown that the effective barrier heights and energy band offsets are the governing reason behind the significant improvement in N-polar devices.

引用

页数：5

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