A Universal, Rapid Method for Clean Transfer of Nanostructures onto Various Substrates

被引:198
作者
Li, Hai [1 ]
Wu, Jumiati [1 ]
Huang, Xiao [1 ]
Yin, Zongyou [1 ]
Liu, Juqing [1 ]
Zhang, Hua [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
clean transfer; 0D nanoparticles; 1D nanowires; 2D nanosheets; heterostructure; various substrates; photoresponse; THIN-FILM TRANSISTORS; GRAPHENE FILMS; HIGH-QUALITY; MOS2; HETEROSTRUCTURES; IDENTIFICATION; LAYERS;
D O I
10.1021/nn501779y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transfer and integration of nanostructures onto target substrates is the prerequisite for their fundamental studies and practical applications. Conventional transfer techniques that involve stamping, lift-off, and/or striping suffer from the process-specific drawbacks, such as the requirement for chemical etchant or high-temperature annealing and the introduction of surface discontinuities and/or contaminations that can greatly hinder the properties and functions of the transferred materials. Herein, we report a universal and rapid transfer method implementable at mild conditions. Nanostructures with various dimensionalities (i.e., nanoparticles, nanowires, and nanosheets) and surface properties (i.e., hydrophilic and hydrophobic) can be easily transferred to diverse substrates including hydrophilic, hydrophobic, and flexible surfaces with good fidelity. Importantly, our method ensures the rapid and clean transfer of two-dimensional materials and allows for the facile fabrication of vertical heterostructures with various compositions used for electronic devices. We believe that our method can facilitate the development of nanoelectronics by accelerating the clean transfer and integration of low-dimensional materials into multidimensional structures.
引用
收藏
页码:6563 / 6570
页数:8
相关论文
共 41 条
[1]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[2]   Electrochemistry at the Edge of a Single Graphene Layer in a Nanopore [J].
Banerjee, Shouvik ;
Shim, Jiwook ;
Rivera, Jose ;
Jin, Xiaozhong ;
Estrada, David ;
Solovyeva, Vita ;
You, Xueqiu ;
Pak, James ;
Pop, Eric ;
Aluru, Narayana ;
Bashir, Rashid .
ACS NANO, 2013, 7 (01) :834-843
[3]   Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures [J].
Bertolazzi, Simone ;
Krasnozhon, Daria ;
Kis, Andras .
ACS NANO, 2013, 7 (04) :3246-3252
[4]   Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].
Britnell, L. ;
Gorbachev, R. V. ;
Jalil, R. ;
Belle, B. D. ;
Schedin, F. ;
Mishchenko, A. ;
Georgiou, T. ;
Katsnelson, M. I. ;
Eaves, L. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Leist, J. ;
Geim, A. K. ;
Novoselov, K. S. ;
Ponomarenko, L. A. .
SCIENCE, 2012, 335 (6071) :947-950
[5]   Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication [J].
Carlson, Andrew ;
Bowen, Audrey M. ;
Huang, Yonggang ;
Nuzzo, Ralph G. ;
Rogers, John A. .
ADVANCED MATERIALS, 2012, 24 (39) :5284-5318
[6]   Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates [J].
Chan, Mei Yin ;
Komatsu, Katsuyoshi ;
Li, Song-Lin ;
Xu, Yong ;
Darmawan, Peter ;
Kuramochi, Hiromi ;
Nakaharai, Shu ;
Aparecido-Ferreira, Alex ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Tsukagoshi, Kazuhito .
NANOSCALE, 2013, 5 (20) :9572-9576
[7]   High-frequency self-aligned graphene transistors with transferred gate stacks [J].
Cheng, Rui ;
Bai, Jingwei ;
Liao, Lei ;
Zhou, Hailong ;
Chen, Yu ;
Liu, Lixin ;
Lin, Yung-Chen ;
Jiang, Shan ;
Huang, Yu ;
Duan, Xiangfeng .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2012, 109 (29) :11588-11592
[8]   Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices [J].
Cheng, Zengguang ;
Zhou, Qiaoyu ;
Wang, Chenxuan ;
Li, Qiang ;
Wang, Chen ;
Fang, Ying .
NANO LETTERS, 2011, 11 (02) :767-771
[9]   Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices [J].
Choi, Min Sup ;
Lee, Gwan-Hyoung ;
Yu, Young-Jun ;
Lee, Dae-Yeong ;
Lee, Seung Hwan ;
Kim, Philip ;
Hone, James ;
Yoo, Won Jong .
NATURE COMMUNICATIONS, 2013, 4
[10]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726