Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors

被引：27

作者：

Lee, Neung-Hee ^{[1
]}

Lee, Minseong

Choi, Woojin

Kim, Donghwan

Jeon, Namcheol

Choi, Seonhong

Seo, Kwang-Seok

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; PLASMA TREATMENT; ENHANCEMENT-MODE; SCHOTTKY DIODES; HEMTS; GAN; IMPACT; PASSIVATION; PERFORMANCE; OXIDATION;

D O I：

10.7567/JJAP.53.04EF10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O-2 or N2O), or plasma treatment (CF4 or SF6) before SiNx passivation. Among these treatments, SF6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current-voltage (I-V) characteristics most effectively. (C) 2014 The Japan Society of Applied Physics

引用

页数：5

共 33 条

[1] The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation [J].

Bermudez, VM ;

Koleske, DD ;

Wickenden, AE .

APPLIED SURFACE SCIENCE, 1998, 126 (1-2) :69-82

[2] Fabrication and characterization of GaN FETs [J].

Binari, SC ;

Kruppa, W ;

Dietrich, HB ;

Kelner, G ;

Wickenden, AE ;

Freitas, JA .

SOLID-STATE ELECTRONICS, 1997, 41 (10) :1549-1554

[3] Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs [J].

Buttari, D ;

Heikman, S ;

Keller, S ;

Mishra, UK .

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, :461-469

[4] Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode [J].

Cai, Yong ;

Zhou, Yugang ;

Lau, Kei May ;

Chen, Kevin J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2207-2215

[5] Pd/InAlN Schottky diode with low reverse current by sulfide treatment [J].

Chen, Z. T. ;

Fujita, K. ;

Egawa, T. .

APPLIED PHYSICS LETTERS, 2011, 99 (18)

[6] Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors [J].

Chiu, Hsien-Chin ;

Yang, Chih-Wei ;

Chen, Chao-Hung ;

Wu, Chia-Hsuan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) :3334-3338

[7] Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices [J].

Choi, Minseok ;

Lyons, John L. ;

Janotti, Anderson ;

Van de Walle, Chris G. .

APPLIED PHYSICS LETTERS, 2013, 102 (14)

[8] V-gate GaNHEMTs for X-band power applications [J].

Chu, Rongming ;

Shen, Likun ;

Fichtenbaum, Nicholas ;

Brown, David ;

Chen, Zhen ;

Keller, Stacia ;

DenBaars, Steven P. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) :974-976

[9] Impact of CF4 plasma treatment on GaN [J].

Chu, Rongming ;

Suh, Chang Soo ;

Wong, Man Hoi ;

Fichtenbaum, Nicholas ;

Brown, David ;

McCarthy, Lee ;

Keller, Stacia ;

Wu, Feng ;

Speck, James S. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (09) :781-783

[10] Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs [J].

Chung, Jinwook W. ;

Roberts, John C. ;

Piner, Edwin L. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) :1196-1198

← 1 2 3 4 →