Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors

被引：27
|
作者：
Lee, Neung-Hee [1 ]
Lee, Minseong
Choi, Woojin
Kim, Donghwan
Jeon, Namcheol
Choi, Seonhong
Seo, Kwang-Seok
机构：
[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151742, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期
关键词：
FIELD-EFFECT TRANSISTORS; PLASMA TREATMENT; ENHANCEMENT-MODE; SCHOTTKY DIODES; HEMTS; GAN; IMPACT; PASSIVATION; PERFORMANCE; OXIDATION;
D O I：
10.7567/JJAP.53.04EF10
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O-2 or N2O), or plasma treatment (CF4 or SF6) before SiNx passivation. Among these treatments, SF6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current-voltage (I-V) characteristics most effectively. (C) 2014 The Japan Society of Applied Physics
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页数：5
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