Non-volatile Memory Devices Based on Diphenyl Bithiophenes

被引：0

作者：

Canesi, E. V. ^{[1
]}

Bertarelli, C. ^{[1
]}

Bianco, A. ^{[1
]}

Caironi, M. ^{[2
]}

Dassa, G. ^{[1
]}

Natali, D. ^{[2
]}

Rottigni, A. ^{[2
]}

Sampietro, M. ^{[2
]}

Zerbi, G. ^{[1
]}

机构：

[1] Politecn Milan, Dip Chim Mat & Ingn Chim G Natta, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

[2] Politecn Milan, Dip Elect Informaz, I-20133 Milan, Italy

来源：

SMART MATERIALS & MICRO/NANOSYSTEMS | 2009年 / 54卷

关键词：

organic electronics; memory; switching; thiophene; THIN-FILMS;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Non volatile memory devices have been developed using diphenyl bithiophene derivatives (DPBT) as active layer. The devices, developed with a two terminal vertical structure where the spin cast organic layer is sandwiched between two electrodes, behave as bistable conductance switching memory cells; the modification of the electrodes material and of the organic layer composition introduces significant changes in the electrical behaviour, that give some indications on the molecular origin of the electrical bistability. These data are enriched by in-situ spectroscopic experiments.

引用

页码：458 / 463

页数：6

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