Epitaxial growth of TiSe2 thin films on Se-terminated GaAs(111)B

被引：5
|
作者：
Nishikawa, H
Shimada, T
Koma, A
机构：
[1] Department of Chemistry, Faculty of Science, University of Tokyo, Bunkyo-ku
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 05期
关键词：
D O I：
10.1116/1.580240
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Epitaxial growth of TiSe2 films on Se-terminated GaAs(111)B substrates were carried out at different growth temperature by molecular beam epitaxy. Grown films have been investigated by reflection high energy electron diffraction, Auger electron spectroscopy, and measurements of resistivity parallel to the surface. TiSe2 epitaxial films have been obtained at various temperatures, but the optimum growth temperature was determined to be 400 degrees C. A charge density wave transition has been observed in the resistivity of the film grown at 400 degrees C, indicating that it has a good quality comparable to a bulk single crystal. (C) 1996 American Vacuum Society.
引用
收藏
页码：2893 / 2896
页数：4
相关论文
共 50 条
  • [1] INAS EPITAXIAL NANOCRYSTAL GROWTH ON SE-TERMINATED GAAS(001)
    WATANABE, Y
    MAEDA, F
    OSHIMA, M
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 143 - 148
  • [2] THIN EPITAXIAL LEAD FILMS ON TISE2(001)
    WEITERING, HH
    HIBMA, T
    SURFACE SCIENCE, 1989, 211 (1-3) : 790 - 796
  • [3] Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates
    Dong, Xu
    Li, Yongkai
    Li, Ji
    Peng, Xianglin
    Qiao, Lu
    Chen, Dongyun
    Yang, Huixia
    Xiong, Xiaolu
    Wang, Qinsheng
    Li, Xiang
    Duan, Junxi
    Han, Junfeng
    Xiao, Wende
    JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (22): : 13637 - 13641
  • [4] Epitaxial growth of TiSe2/TiO2 heterostructure
    Jia, Tao
    Rebec, Slavko N.
    Tang, Shujie
    Xu, Kejun
    Sohail, Hafiz M.
    Hashimoto, Makoto
    Lu, Donghui
    Moore, Robert G.
    Shen, Zhi-Xun
    2D MATERIALS, 2019, 6 (01)
  • [5] Atmospheric pressure CVD of TiSe2 thin films on glass
    Boscher, ND
    Carmalt, CJ
    Parkin, IP
    CHEMICAL VAPOR DEPOSITION, 2006, 12 (01) : 54 - 58
  • [6] Growth of epitaxial thin Pd(111) films on Pt(111) and oxygen-terminated FeO(111) surfaces
    Dohnalek, Z.
    Kim, Jooho
    Kay, Bruce D.
    SURFACE SCIENCE, 2006, 600 (17) : 3461 - 3471
  • [7] Towards Scalable Synthesis of TiSe2 and VSe2 Thin Films
    Kadiwala, K.
    Dipans, E.
    Dipane, L.
    Butanovs, E.
    Polyakov, B.
    LATVIAN JOURNAL OF PHYSICS AND TECHNICAL SCIENCES, 2024, 61 (02) : 13 - 22
  • [8] Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films
    Aldous, James D.
    Burrows, Christopher W.
    Maskery, Ian
    Brewer, Matthew
    Pickup, David
    Walker, Marc
    Mudd, James
    Hase, Thomas P. A.
    Duffy, Jon A.
    Wilkins, Stuart
    Sanchez-Hanke, Cecilia
    Bell, Gavin R.
    JOURNAL OF CRYSTAL GROWTH, 2012, 357 : 1 - 8
  • [9] Surface morphology of S or Se terminated GaAs(111)B
    Nishikawa, H
    Saiki, K
    Koma, A
    APPLIED SURFACE SCIENCE, 1997, 113 : 453 - 456
  • [10] Surface morphology of S or Se terminated GaAs(111)B
    Univ of Tokyo, Tokyo, Japan
    Appl Surf Sci, (453-456):
12345