Performance enhancement in chemical vapor deposition graphene field-effect transistors by high-κ dielectric screening

被引：13

作者：

Wang, Zegao ^{[1
]}

Chen, Yuanfu ^{[1
]}

Li, Pingjian ^{[1
]}

Liu, Jingbo ^{[1
]}

Tian, Hongjun ^{[1
]}

Qi, Fei ^{[1
]}

Zheng, Binjie ^{[1
]}

Zhou, Jinhao ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

MATERIALS EXPRESS | 2014年 / 4卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Graphene; High-kappa Dielectric; Screening; Raman Spectroscopy; Chemical Vapor Deposition; DOPED GRAPHENE; FILMS; TRANSPORT; MOBILITY;

D O I：

10.1166/mex.2014.1146

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The transport properties of CVD graphene-based field-effect transistors (GFETs) before and after introducing high-k dimethyl sulfoxide (DMSO) were investigated. The results show that after introducing DMSO, the performance of GFETs was significantly improved: the maximum drain current I-Dmax, the maximum transconductance g(mmax), and the field-effect mobility increase by 2.5, 24, and 23 times, respectively. The mechanism for the performance enhancement by high-k dielectric was analyzed by Raman spectroscopy and transport measurements, and both are consistent with each other.

引用

页码：85 / 89

页数：5

共 20 条

[1] High-Throughput Synthesis of Graphene by Intercalation - Exfoliation of Graphite Oxide and Study of Ionic Screening in Graphene Transistor [J].

Ang, Priscilla Kailian ;

Wang, Shuai ;

Bao, Qiaoliang ;

Thong, John T. L. ;

Loh, Kian Ping .

ACS NANO, 2009, 3 (11) :3587-3594

[2] Two-Dimensional Crystals: Beyond Graphene [J].

Castro Neto, A. H. ;

Novoselov, K. .

MATERIALS EXPRESS, 2011, 1 (01) :10-17

[3] Dielectric Screening Enhanced Performance in Graphene FET [J].

Chen, Fang ;

Xia, Jilin ;

Ferry, David K. ;

Tao, Nongjian .

NANO LETTERS, 2009, 9 (07) :2571-2574

[4] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[5] Boron nitride substrates for high mobility chemical vapor deposited graphene [J].

Gannett, W. ;

Regan, W. ;

Watanabe, K. ;

Taniguchi, T. ;

Crommie, M. F. ;

Zettl, A. .

APPLIED PHYSICS LETTERS, 2011, 98 (24)

[6] High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides [J].

Hong, X. ;

Posadas, A. ;

Zou, K. ;

Ahn, C. H. ;

Zhu, J. .

PHYSICAL REVIEW LETTERS, 2009, 102 (13)

[7] Air-Free Fabrication and Investigation of Effect of Air Exposure on Carbon Nanotube Field-Effect Transistors [J].

Ishii, Satoshi ;

Kishimoto, Shigeru ;

Ohno, Yutaka ;

Mizutani, Takashi .

MATERIALS EXPRESS, 2011, 1 (04) :285-290

[8] Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering [J].

Jena, Debdeep ;

Konar, Aniruddha .

PHYSICAL REVIEW LETTERS, 2007, 98 (13)

[9] Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process [J].

Li, Xuesong ;

Magnuson, Carl W. ;

Venugopal, Archana ;

An, Jinho ;

Suk, Ji Won ;

Han, Boyang ;

Borysiak, Mark ;

Cai, Weiwei ;

Velamakanni, Aruna ;

Zhu, Yanwu ;

Fu, Lianfeng ;

Vogel, Eric M. ;

Voelkl, Edgar ;

Colombo, Luigi ;

Ruoff, Rodney S. .

NANO LETTERS, 2010, 10 (11) :4328-4334

[10] Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport [J].

Lu, Yu-Fen ;

Lo, Shun-Tsung ;

Lin, Jheng-Cyuan ;

Zhang, Wenjing ;

Lu, Jing-Yu ;

Liu, Fan-Hung ;

Tseng, Chuan-Ming ;

Lee, Yi-Hsien ;

Liang, Chi-Te ;

Li, Lain-Jong .

ACS NANO, 2013, 7 (08) :6522-6532

← 1 2 →