Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

被引：26

作者：

Kim, Jihyun ^{[1
]}

Freitas, J. A., Jr.

Mittereder, J.

Fitch, R.

Kang, B. S.

Pearton, S. J.

Ren, F.

机构：

[1] Korea Univ, Dept Chem & Biol Engn, Seoul, South Korea

[2] USN, Res Lab, ESTD, Washington, DC 20375 USA

[3] WPAFB, Sensors Directorate, Air Force Res Lab, Dayton, OH 45433 USA

[4] Univ Florida, Coll Engn, Gainesville, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 03期

关键词：

HEMT; Raman; temperature; GaN; reliability;

D O I：

10.1016/j.sse.2005.11.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with < 1 mu m spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by similar to 30 degrees C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 degrees C at 800 mW DC input power. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：408 / 411

页数：4

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