Single-pole-four-throw switch using high-aspect-ratio lateral switches

被引：15

作者：

Liu, AQ ^{[1
]}

Palei, W ^{[1
]}

Tang, M ^{[1
]}

Alphones, A ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 18期

关键词：

D O I：

10.1049/el:20045718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.

引用

页码：1125 / 1126

页数：2